CAP CER 1111
SMALL SIGNAL FET
IC DRAM 128MBIT PAR 54TSOP II
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
电压 - 击穿 (v(br)gss): | 35 V |
漏源电压 (vdss): | 30 V |
电流 - 漏极 (idss) @ vds (vgs=0): | 25 mA @ 20 V |
电流消耗 (id) - 最大值: | - |
电压 - 截止 (vgs off) @ id: | - |
输入电容 (ciss) (max) @ vds: | 10pF @ 12V (VGS) |
电阻 - rds(on): | 60 Ohms |
功率 - 最大值: | 310 mW |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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