English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX25xxx05/06/08 |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 86 MHz |
| 写周期时间 - 字，页: | 50µs, 3ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL064LABNFI011Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S25FS064SAGMFV010MRochester Electronics |
SERIAL FLASH, 1.8V, 64MB |
|
AT28LV010-20JU-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
S29AS008J70BFA043Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
BR24C16-RMN6TPROHM Semiconductor |
IC EEPROM 16KBIT I2C 100KHZ 8SO |
|
IS43LR16320C-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MT29F1G01ABAFD12-AAT:FMicron Technology |
IC FLASH 1GBIT SPI 24TBGA |
|
24LC02BHT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY14B512Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 64KX8, CMOS, |
|
71V65703S75BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
AT25SF128A-MHB-TAdesto Technologies |
IC FLASH 128MBIT SPI/QUAD 8UDFN |
|
CY7C199CL-15VCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
SST39VF1601-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
