类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC86CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
CY7C2163KV18-550BZXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S25FL256SDPNFV001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS61WV2568EDBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1425KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
11AA160-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
71V67603S150BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S29GL128S10DHV023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS46R16320D-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
AT24C64AN-10SQ-2.7Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
71V3578S150PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
UPD46185184BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
IS45S16100H-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |