类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA128-I/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MSOP |
|
24AA515-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
IS43DR16128C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
CY7C194-20VCRochester Electronics |
STANDARD SRAM, 64KX4, 20NS, CMOS |
|
CY15B104Q-SXICypress Semiconductor |
IC FRAM 4MBIT SPI 40MHZ 8SOIC |
|
71V416S12BERenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
MX30LF4G18SC-XKIMacronix |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
CY7C136E-25JXIFlip Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
R1LV0108ESF-7SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
DS28E07+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE TO92-3 |
|
GD25VE16CTIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
MX25L2006EZUI-12GMacronix |
IC FLASH 2MBIT SPI 86MHZ 8USON |
|
71V65603S150BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |