English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8 , 64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA256UID-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
CY7C1041G30-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY7C1351B-100BGCRochester Electronics |
ZBT SRAM, 128KX36, 8.5NS |
|
25AA080AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
IS42S83200G-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
NDS36PT5-16ETInsignis Technology Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
6116LA20TPGRochester Electronics |
IC SRAM 16KBIT PARALLEL 24DIP |
|
CY7C1480BV33-200AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
MTFC64GAPALBH-AITMicron Technology |
IC FLASH 512GBIT MMC 153TFBGA |
|
CY14ME064J2-SXQCypress Semiconductor |
IC NVSRAM 64KBIT I2C 8SOIC |
|
70T3519S200BCGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
SST26VF040A-80E/MFRoving Networks / Microchip Technology |
IC FLSH 4MBIT SPI/QUAD I/O 8WDFN |
|
AT28HC256E-90LM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
