English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, FL-L |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | SPI - Quad I/O, QPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V321L25JG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT24C512C-XHD-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
BR24G01FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 1MHZ 8SOPJ |
|
MR0A08BCMA35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
AS4C8M16SA-6TINAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS61LV25616AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AM27S25DMRochester Electronics |
OTP ROM |
|
W631GG6MB-15 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
24FC16T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
70V7339S200BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
70V3589S133BFI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
71V35761SA166BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1011DV33-10BVXITRochester Electronics |
IC SRAM 2MBIT PARALLEL 48VFBGA |
