RES ARRAY 10 RES 10K OHM 20SOIC
2.2UH, 20%, 18MOHM, 14AMP MAX. S
BOX S STEEL NATURAL 8"L X 6"W
IC SRAM 1MBIT PARALLEL 32TSOP II
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.400", 10.16mm Width) |
供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MX25L1006EMI-10GMacronix |
IC FLASH 1MBIT SPI 104MHZ 8SOP |
![]() |
BR93G76FVT-3AGE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOPB |
![]() |
IS46TR16256B-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
![]() |
IS43DR16320D-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
![]() |
GS4576C18GM-18IGSI Technology |
IC DRAM 576MBIT HSTL 144FBGA |
![]() |
S29GL512S11DHAV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
![]() |
CY7C09289V-9AXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
![]() |
7007L20JGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
![]() |
MT46H128M16LFDD-48 IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
![]() |
CY7C1062GE30-10BGXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
![]() |
71P72804S250BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
![]() |
34VL02/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
![]() |
IS61QDP2B42M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |