类型 | 描述 |
---|---|
系列: | EM-20 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (MLC) |
内存大小: | 32Gb (4G x 8) |
内存接口: | eMMC |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-BGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130SA100CRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
AT25DF256-XMHN-TAdesto Technologies |
IC FLASH 256KBIT SPI 8TSSOP |
|
CY62128EV30LL-55ZXERochester Electronics |
STANDARD SRAM, 128KX8, 55NS PDSO |
|
AS4C2M32S-6TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
W25M02GVZEIT TRWinbond Electronics Corporation |
IC FLASH 2GBIT SPI 104MHZ 8WSON |
|
IS62WV10248BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
CY7C1381B-83ACRochester Electronics |
STANDARD SRAM, 512KX36, 10NS |
|
IS42S16160J-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
24AA16-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
MT25QL512ABB8E12-1SIT TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
24AA01T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
S25FS256SDSBHM200Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
IS61DDP2B21M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |