IC FLASH 256MBIT SPI/QUAD 24BGA
KIT DEVELOPMENT M6E MICRO-LTE
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, FS-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61DDP2B21M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CY14B108M-ZSP25XICypress Semiconductor |
IC NVSRAM 8MBIT PAR 54TSOP II |
|
AT25SF081-SSHD-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
71V016SA12PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MR25H256MDFEverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |
|
24AA32A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
CY7C194-20VCTRochester Electronics |
STANDARD SRAM, 64KX4, 20NS, CMOS |
|
24LC32AFT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TDFN |
|
IS46DR16160B-25DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
CY7C1049CV33-10VXCRochester Electronics |
STANDARD SRAM |
|
CY7C1021BN-15ZIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
TH58BVG2S3HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
IS61LF25618A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |