English
简体中文
ANTI-STATIC PROJECT TRAY
IC FLASH 1GBIT PARALLEL 67VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 67-VFBGA |
| 供应商设备包: | 67-VFBGA (6.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29AL016J70TFM010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY62167GN30-45BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48BGA |
|
CAT24M01WI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
S25FL256SDPBHB213Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
25LC640A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
BR25H160FJ-WCE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SOPJ |
|
S25FL128SAGMFVG03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT58L512Y36DT-10Rochester Electronics |
CACHE SRAM, 512KX36, 5NS PQFP100 |
|
IS42S83200G-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
RMLV0816BGSB-4S2#HA0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
CAT25020VI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
W9425G6KH-5IWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 66TSOP II |
|
IS61NLP12836EC-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PAR 165TFBGA |