类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V65803S100PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140LA35PDGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
S25FS064SDSMFA013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
S29GL512P10FAIR20Flip Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
|
71V416S10BERochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
71T75802S166PFIRochester Electronics |
1M X 18, SYNCHRONOUS ZBT SRAM |
|
SST25VF020B-80-4C-Q3AE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8USON |
|
CY7C1362C-166BZCRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
MT46H32M32LFB5-5 AAT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
FM93C56LZM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS42S83200G-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
FM24C09UNRochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8DIP |
|
24AA52T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |