English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-VFBGA |
| 供应商设备包: | 36-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28C256-20LM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
S29AL016J70TFA013Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
71V65703S85BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
AT24C08BN-SP25-BRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
CY7C1565KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43R86400F-5TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
BR24G08FJ-3GTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOPJ |
|
IS42S16400J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
IS61WV12816EDBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS7C34098A-15TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
CY7C1011CV33-10ZXIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
AS7C32096A-10TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
UPD44164362BF5-E40-EQ3-ARochester Electronics |
DDR SRAM, 512KX36, 0.45NS |
