类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL256LAGMFM001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C1264XV18-366BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1049BV33-15ZCRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
CAT25040VI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
CY62147GE18-55BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
AT21CS01-SSHM10-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
|
W631GU8MB11I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
CY7C1363A-133ACTRochester Electronics |
STANDARD SRAM, 512KX18, 6.5NS |
|
M24C08-RDW6TPSTMicroelectronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
70T653MS15BC8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
CAT93C56VI-1.8TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
SST25VF040B-50-4C-QAFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8WSON |
|
27C256-20/P229Rochester Electronics |
IC EPROM 256KBIT PARALLEL 28DIP |