English
简体中文
IC DRAM 256MBIT PARALLEL 90TFBGA
CONN BARRIER STRP 24CIRC 0.374"
2410S26 MICRO STRIPPER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 256Mb (8M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71T75802S133PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
25LC160C-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
71V67703S80BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
STK12C68-PF55Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
CY14B101L-SP45XCRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS61WV25616EDBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
TMS27PC256-2NLRochester Electronics |
OTP ROM, 32KX8, 200NS PDIP28 |
|
RM24C256DS-LTAI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8TSSOP |
|
70T659S12BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S29GL256P11FFIV20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
70V657S15BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
DS28E07P+TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
CY7C1360S-166BZXIRochester Electronics |
IC SRAM 9MBIT 166MHZ 165BGA |