English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL128SAGBHVA03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
DS1245Y-70IND+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
93C86CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
RM25C64DS-LMAI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 20MHZ 8UDFN |
|
CY7C1318KV18-250BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
HM1-65642C-9Rochester Electronics |
8K X 8 ASYNCHRONOUS CMOS SRAM |
|
S70FL01GSAGMFV011Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
CY7C1011G30-10BAJXETCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48FBGA |
|
MT58L256L36FT-10Rochester Electronics |
CACHE SRAM 256KX36 10NS PQFP100 |
|
71V25761S183PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS25WP016D-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
AS7C1026B-10TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
70V37L20PFGI8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
