类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93AA66T/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
S29GL128P10FFIS10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MD2114AL3Rochester Electronics |
STANDARD SRAM, 1KX4, 150NS |
|
AT24CS32-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
71V3577S75BGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CAT93C46VI-T3Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
71256L25YGRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
UPD44165184BF5-E33-EQ3Rochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CY7C1019BV33-15VCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
S25FS128SAGMFB101Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
7035L15PFG8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
BR24C02-RMN6TPROHM Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
93LC66A/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |