类型 | 描述 |
---|---|
系列: | FS-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W988D2FBJX6EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MR1A16AMYS35REverspin Technologies, Inc. |
IC RAM 2MBIT PARALLEL 44TSOP2 |
|
CY62148GN30-45SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
47C16T-I/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
IS42S16320F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
DS2502-E48+Maxim Integrated |
IC EPROM 1KBIT 1-WIRE TO92-3 |
|
FM25L16B-DGCypress Semiconductor |
IC FRAM 16KBIT SPI 20MHZ 8TDFN |
|
CY7C1382S-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
BR25L160F-WE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |
|
UPD46185094BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
7143LA20JG8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
24AA02HT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
BR24G128FV-3GTE2ROHM Semiconductor |
IC EEPROM 128K I2C 8SSOPB |