类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1352G-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24LC512T-E/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
MT55L256V32PT-7.5Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
M95160-WMN6PSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
|
71V67703S85BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS43R16320E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
93LC56B/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
W988D2FBJX7EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
PC28F512M29EWHDFlip Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
CY7C1347B-100BGCRochester Electronics |
CACHE SRAM, 128KX36, 5.5NS |
|
48L512-I/SNRoving Networks / Microchip Technology |
IC EERAM 512KBIT SPI 66MHZ 8SOIC |
|
SST39LF402C-55-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
93AA56CXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |