English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71256S35TDBRochester Electronics |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
70T3719MS133BBGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 324PBGA |
|
SST26VF016B-80E/SMRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
S26KS256SDABHI030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
EM6GE08EW9G-10IHEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CY14B116N-Z30XICypress Semiconductor |
IC NVSRAM 16MBIT PAR 48TSOP I |
|
11LC160T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8SOIC |
|
S25FL164K0XBHV020Rochester Electronics |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IS43TR82560DL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
IS43TR82560C-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
IS61LF12836EC-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
CYDC128B16-55AXIFlip Electronics |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
M95128-DRDW8TP/KSTMicroelectronics |
IC EEPROM 128KBIT SPI 8TSSOP |
