类型 | 描述 |
---|---|
系列: | HL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7132LA35PDGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
24LC04BH-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
93C46BX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
6116LA15TPGRochester Electronics |
6116 - STATIC RAM 16K (2K X 8-BI |
|
S25FS256SAGMFM003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
SST38VF6403-90-5C-B3KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
CYD02S36V18-167BBCRochester Electronics |
IC SRAM 2MBIT PARALLEL 256FBGA |
|
MT28EW128ABA1LPC-0SITMicron Technology |
IC FLASH 128MBIT PARALLEL 64LBGA |
|
MB85RC128PNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT I2C 400KHZ 8SOP |
|
AT25SF081-SSHD-BAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
24AA64T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
70V631S10BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
IS62C256AL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |