类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (16M x 32) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL256S90FHI013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S29GL256P11FAIV22Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CAT28F001H-90TRochester Electronics |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT34C02BY5-10YU-1.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
S29GL01GT13DHNV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT44K32M18RB-107E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
X28HC64S-15Rochester Electronics |
EEPROM, 8KX8, 150NS, PARALLEL |
|
IS42VM16320E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1372DV25-167BZXCRochester Electronics |
ZBT SRAM, 1MX18, 3.4NS |
|
CY7C1049GN30-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
SST39SF010A-70-4C-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
FT24C512A-USG-TFremont Micro Devices |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
|
M24C64-DFCT6TP/KSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8WLCSP |