English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II+ |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC080BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
S29GL256P11FFI013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
N02L83W2AT25IRochester Electronics |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
W9751G6NB-18 TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84VFBGA |
|
24AA256T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DFN |
|
S25FL128SDSNFI000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AS6C62256A-70PCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28DIP |
|
IS46DR16320C-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
IS62WV5128BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
JS28F256P30BFFFlip Electronics |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
71V3556S100PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
BR93H66RF-WCE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 1.25MHZ 8SOP |
|
MT58L512Y32DT-10Rochester Electronics |
CACHE SRAM, 512KX32, 5NS PQFP100 |
