English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SST26 SQI® |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 1.5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
6116SA55DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
CY7C194-45VCRochester Electronics |
STANDARD SRAM, 64KX4, 45NS, CMOS |
|
RM24C128C-LSNI-TAdesto Technologies |
IC CBRAM 128KBIT I2C 1MHZ 8SOIC |
|
CY62157ELL-55BVXERochester Electronics |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
MB85RS256APNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 256KBIT SPI 25MHZ 8SOP |
|
S29GL512S10DHI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
DS1225AB-150IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
MT58L128L18DT-10Rochester Electronics |
CACHE SRAM, 128KX18, 5NS PQFP100 |
|
IS61WV51216BLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S25FL256SAGMFM000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71V2556SA133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
FM24C08UM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
GVT71128E36T-9TRochester Electronics |
IC SRAM 4MBIT 90MHZ |
