English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 150ns |
| 访问时间: | 150 ns |
| 电压 - 电源: | 4.75V ~ 5.25V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 28-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L128L18DT-10Rochester Electronics |
CACHE SRAM, 128KX18, 5NS PQFP100 |
|
IS61WV51216BLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S25FL256SAGMFM000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71V2556SA133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
FM24C08UM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
GVT71128E36T-9TRochester Electronics |
IC SRAM 4MBIT 90MHZ |
|
71V65803S100PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS4C4M32SA-7TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
CY62146DV30LL-55BVIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
IS42VM16160K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
M29DW128G70NF6EFlip Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
FM24C256NRochester Electronics |
IC EEPROM 256KBIT I2C 8DIP |
|
AT27C1024-45JU-TRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
