类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M5M5W816TP-55HI#DTRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
CY7C1412SV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY62167DV30LL-55ZITRochester Electronics |
STANDARD SRAM, 1MX16, 55NS |
|
AT24CM01-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
70T3599S133BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
25LC512T-M/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
IS42VM32200M-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
S29GL128S10DHB020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AS4C64M16D2A-25BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
M93C56-RDW3TP/KSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
CY7C1312CV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS25LP128F-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
S25FL064LABMFB000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |