English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8, 256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UFDFN Exposed Pad |
| 供应商设备包: | 8-Mini Map (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42VM32400H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1412AV18-200BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
M24512-DRMN8TP/KSTMicroelectronics |
IC EEPROM 512KBIT I2C 1MHZ 8SO |
|
S25FL128SAGBHIZ00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
71V25761S166PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29AZ5A3CHHWD-18AAT.84F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
MX29GL512FUXFI-11GMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
CY62137FV18LL-55BVXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
IS42S32160F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
IS43TR82560C-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
CAT93C76YI-GT3Rochester Electronics |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
CYD02S36V18-200BBXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 256FBGA |
|
GS840Z18CGT-250IGSI Technology |
IC SRAM 4MBIT PARALLEL 100TQFP |
