English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1525JV18-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
FT25C08A-USR-TFremont Micro Devices |
IC EEPROM 8KBIT SPI 20MHZ 8SOP |
|
BR93G46FVT-3GE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOPB |
|
IS43R16320E-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
AT24CS04-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
AT24C512C-SSHMGT-TRochester Electronics |
IC EEPROM 512KBIT I2C 8SOIC |
|
71V65803S150BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S29AL016J70BFA013Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
93LC86CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
4720BDMRochester Electronics |
STANDARD SRAM, 256X1, 500NS |
|
MX25U25635FZ4I-10GMacronix |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
24VL025/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
DS1220AD-200IND+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
