类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 200ns |
访问时间: | 200 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 24-DIP Module (0.600", 15.24mm) |
供应商设备包: | 24-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62146GE-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MX25L3233FM2I-08QMacronix |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
AS7C256A-12TINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
S29GL01GS10DHA020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
71V424S15YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S29GL064S70TFA013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
CY7C1363A-117ACRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT25020ZI-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8MSOP |
|
71V3556S100PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24LC01BHT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
IS43TR16128AL-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
11LC040-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8SOIC |
|
MT29F16G08ABCBBH1-12AIT:BMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |