类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, FL1-K |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UDFN Exposed Pad |
供应商设备包: | 8-USON (4x4) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V657S12BFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
AT24C64D-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
BR24C02-10TU-1.8ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS42S16800F-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
M24C04-RMN6PSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
CY7C15632KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY14B101LA-ZS45XIKARochester Electronics |
NON-VOLATILE SRAM |
|
CY7C1311KV18-250BZCRochester Electronics |
QDR SRAM, 2MX8, 0.45NS, CMOS, PB |
|
BR25L010FV-WE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 5MHZ 8SSOPB |
|
CAT25040HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 10MHZ 8UDFN |
|
24LC256-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DFN |
|
CY7C1321CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C136E-25JXCFlip Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |