类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (64K x 4) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 24-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24G08FV-3GTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8SSOPB |
|
CY62147BV18LL-70BAIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
CAT24C16C4ATRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 4WLCSP |
|
24FC16HT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
CY7C1313V18-167BZCRochester Electronics |
QDR SRAM, 1MX18, 0.5NS |
|
70V3399S133BFI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
CY7C261-30PCRochester Electronics |
OTP ROM, 8KX8, 30NS |
|
71T75602S133PFGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
SST39VF800A-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
CY7C1470V33-200AXCRochester Electronics |
ZBT SRAM, 2MX36, 3NS PQFP100 |
|
S29PL064J70BFW120Rochester Electronics |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
MX25U3235EZNI-10GMacronix |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
AS7C3256A-15JINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |