类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8, 1K x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S34ML04G204BHI010Flip Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |
|
BR24G02NUX-3TTRROHM Semiconductor |
IC EEPROM 2KBIT I2C VSON008X2030 |
|
FT24C128A-EDR-BFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8DIP |
|
S29GL01GT11FHIV40Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C1041CV33-20ZXERochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
24AA044T-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
MT58L256L32FS-7.5Rochester Electronics |
CACHE SRAM, 256KX32, 7.5NS PQFP1 |
|
CY7C1350G-133BGXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S70FS01GSAGBHB210Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
23LCV1024-I/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/DL I/O 8TSSOP |
|
IS45S16160G-6CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
5962-9459901MYARochester Electronics |
NON-VOLATILE SRAM, 8KX8 |
|
CY7C243-25WCRochester Electronics |
UVPROM, 4KX8, 25NS, CMOS |