类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (2M x 18) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62158EV30LL-45BVXITCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
S-24C64CI-T8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 64KBIT I2C 8TSSOP |
|
CAT28LV65WI-20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
71V3558S133PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
93C76CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DFN |
|
71V67603S133BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S70FL01GSAGMFB010Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
W632GU8NB09IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
MX25R512FOIH0Macronix |
IC FLASH 512KBIT SPI/QUAD 8TSSOP |
|
93C56B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |
|
25LC160CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
RMLV0816BGBG-4S2#KC0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
IS61QDPB24M18A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |