类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC160CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
RMLV0816BGBG-4S2#KC0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
IS61QDPB24M18A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
S25FL116K0XMFI041Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
93LC46BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CAT93C56WRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
SST39LF010-55-4C-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
W25Q257JVFIQWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C1414KV18-300BZCRochester Electronics |
QDR SRAM, 1MX36, 0.45NS, CMOS, P |
|
CY7C1049G-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1265KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
PC28F00AP30BFAFlip Electronics |
IC FLASH 1GBIT PAR 64EASYBGA |
|
RM24C128DS-LSNI-BAdesto Technologies |
IC CBRAM 128KBIT I2C 1MHZ 8SOIC |