类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 278 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AS4C4M32SA-6TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
![]() |
AT25040B-MAHL-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8UDFN |
![]() |
PALC22V10-30DMRochester Electronics |
ELECTRICALLY ERASABLE PAL DEVIC |
![]() |
AS7C3256A-10TINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
![]() |
IS66WVC2M16EALL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
![]() |
CY14V101PS-SF108XICypress Semiconductor |
IC NVSRAM 1MBIT SPI 16SOIC |
![]() |
GS864236GB-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 119FPBGA |
![]() |
AS4C128M16D2-25BINAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |
![]() |
W25Q128JWPIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
![]() |
11LC161-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
![]() |
71V016SA10BFGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |
![]() |
S29GL01GS11DHIV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
![]() |
25AA080/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8DIP |