类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43R86400D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
71P72804S167BQGIRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
CY14MB064J1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
CYDMX064A16-65BVXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100VFBGA |
|
24LC01BHT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
M95160-WDW6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C144-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY62147G30-45ZSXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1339F-100BGIRochester Electronics |
CACHE SRAM, 128KX32, 4.5NS |
|
CAT25160VI-G-CSRochester Electronics |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
BU9883FV-WE2ROHM Semiconductor |
IC EEPROM 6KBIT I2C 16SSOPB |
|
AT34C02BN-10SU-1.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
IS46TR16128DL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |