English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 3.4 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CYDMX064A16-65BVXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100VFBGA |
|
24LC01BHT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
M95160-WDW6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C144-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY62147G30-45ZSXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1339F-100BGIRochester Electronics |
CACHE SRAM, 128KX32, 4.5NS |
|
CAT25160VI-G-CSRochester Electronics |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
BU9883FV-WE2ROHM Semiconductor |
IC EEPROM 6KBIT I2C 16SSOPB |
|
AT34C02BN-10SU-1.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
IS46TR16128DL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MX25L3255EM2I-10GMacronix |
IC FLASH 32MBIT SPI 104MHZ 8SOP |
|
71256S70TDBRochester Electronics |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
S-24C256CI-T8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 256KBIT I2C 8TSSOP |
