English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 28-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93AA56T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
AT25XV021A-SSHV-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
S25FL512SDPBHVC13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
CY7C09389V-9ACRochester Electronics |
DUAL-PORT SRAM, 64KX18, 9NS |
|
IS25WP256D-RMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SERIAL 16SOIC |
|
CY62148CV30LL-70BAIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
FM27C256V90Rochester Electronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
IS42S16320D-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
24C01C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
MT58L128V36P1T-7.5Rochester Electronics |
CACHE SRAM, 128KX36, 4NS PQFP100 |
|
11AA080T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8MSOP |
|
AS6C4016-55BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MT46H128M16LFDD-48 WT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
