类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11AA080T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8MSOP |
|
AS6C4016-55BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MT46H128M16LFDD-48 WT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
24LC1026T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
NM24C03FLZEM8Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
CY7C1470BV25-167BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70T631S12BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
AT24C512C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
UPD46185094BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
IS66WVE4M16EALL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
IS43LD32640B-25BPLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
FM24C03ULNRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
CAT25040LRochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8DIP |