类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX30LF4G28SB-XKIMacronix |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
FEMC002GTTE7-T14-17Flexxon |
IC FLASH 16GBIT EMMC 153FBGA |
|
FEMC016GTTE7-T14-18Flexxon |
IC FLASH 128GBIT EMMC 100FBGA |
|
S25FS256SDSMFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT45DB161E-MHD-YAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
W631GU6MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
S25FS128SDSBHV203Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
FM24C04B-GRochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
AT45DB041E-SSHNHT-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
AS4C4M32S-6BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1514V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS46R16320D-5TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
GE28F320B3BC90Rochester Electronics |
IC FLASH 32MBIT PARALLEL 48VFBGA |