类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VFDFN Exposed Pad |
供应商设备包: | 8-DFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70T633S10BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
24AA024T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
CY7C1021BNL-15ZSXATRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C1347G-133AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT48LC4M32B2B5-6A XIT:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
S29GL256S10FHIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
7025L15JGRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IS49RL36160-125EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
IS45S32400F-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY62128BNLL-55SITRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CAT25080YI-GT3JNRochester Electronics |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |
|
BR93L56RFJ-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8SOPJ |
|
MT25QU512ABB8E12-0AATMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |