English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS24B33G+T&RMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE 2SFN |
|
M95128-DWDW4TP/KSTMicroelectronics |
IC EEPROM 128KBIT SPI 8TSSOP |
|
AT28HC256F-90SU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AT25SF081B-MAHB-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8USON |
|
CY7C1061G18-15BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
IS66WV51216EBLL-70TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PAR 44TSOP II |
|
HM4-65162-9Rochester Electronics |
2K X 8 ASYNCHRONOUS CMOS SRAM |
|
CY7C1320KV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
TMS2114-20NLRochester Electronics |
STANDARD SRAM, 1KX4 |
|
CY14B101I-SFXICypress Semiconductor |
IC NVSRAM 1MBIT I2C 16SOIC |
|
IS42SM16160K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1370KV33-200AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
UPD44325362BF5-E40-FQ1-ARochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
