类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC1024-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8SOIJ |
|
70V9269L12PRFGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
CY7C1543KV18-450BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
93C66AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
|
25LC080DT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |
|
IS25LP064A-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MTFC32GAPALBH-IT TRMicron Technology |
IC FLASH 256GBIT MMC 153TFBGA |
|
IS61LPD51236A-250B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IS62WV5128EBLL-45T2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
AM27S281APCRochester Electronics |
AM27S281 - OTP ROM, 1KX8, 35NS |
|
N25S830HAT22ISanyo Semiconductor/ON Semiconductor |
IC SRAM 256KBIT SPI 20MHZ 8TSSOP |
|
AS6C1008-55SINLTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOP |
|
S25FL128LAGNFV013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |