类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.173", 4.40mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7S1041G30-10VXIRochester Electronics |
STANDARD SRAM, 256KX16, 10NS PDS |
|
70T651S10BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
S29GL256S90TFA020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
CY7C1361A-133AJCRochester Electronics |
STANDARD SRAM, 256KX36 |
|
93C66AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS62C256AL-25ULIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOP |
|
S29GL032N11FFIS33Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
IS43LR32160B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS45S16320F-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
SST26VF016-80-5I-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
71V424YS12PHRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AS4C8M16SA-6TANAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
71V3556SA100BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |