English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C8M16SA-6TANAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
71V3556SA100BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
25AA128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
W25X20CLSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |
|
AS4C128M32MD4-062BANAlliance Memory, Inc. |
IC DRAM 4GBIT LVSTL 200FBGA |
|
71V67903S85BQIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71024S12TYGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
24AA512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
DS1225AB-200+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
SST25WF080BT-40I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
SST39VF010-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS43R16160D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
24VL025T/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
