类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62157DV30LL-55BVXARochester Electronics |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
MX25U6472FM2I02Macronix |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
S29GL512S10DHA023Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
71V65603S150BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
93C46BX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS29GL256-70SLETISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT PAR 56TSOP I |
|
IS43DR16320E-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
71V65703S85BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S25FL128SAGMFI001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S27KS0642GABHI020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
MX25L6406EZNI-12GFMacronix |
IC FLASH 64MBIT SPI 86MHZ 8WSON |
|
CY7C1360C-166BZXCRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
23A512T-E/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8SOIC |