English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (2M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 2ns |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA64T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
CY7C1356A-133AIRochester Electronics |
ZBT SRAM, 512KX18, 4.2NS |
|
70V38L15PFG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
7130LA55CBRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
S29GL032N90FFA040Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
70V7519S166BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
IS61LV25616AL-10TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
R1LV5256ESA-7SR#B0Rochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
IS61NLF25636A-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS62WV102416BLL-25TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
CY7C1514KV18-333BZXCRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
S29GL01GS10FHSS20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
71V65803S133BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
