类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST49LF080A-33-4C-WHERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
|
71V416S15BE8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY62146G30-45BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY7C1049CV33-12ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93LC46/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
71V2546S100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1399BN-15VXATRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
R1LV0108ESN-5SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
IS42VM16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
M95512-WMN6PSTMicroelectronics |
IC EEPROM 512KBIT SPI 16MHZ 8SO |
|
MT41K128M8DA-107 IT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
S29GL064S70DHI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT25QL01GBBB8ESF-0AAT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |