SWITCH ROTARY DIP BCD 100MA 50V
CA, USB AP W / B STD 5M
IC SRAM 4MBIT PARALLEL 48VFBGA
类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1049CV33-12ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93LC46/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
71V2546S100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1399BN-15VXATRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
R1LV0108ESN-5SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
IS42VM16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
M95512-WMN6PSTMicroelectronics |
IC EEPROM 512KBIT SPI 16MHZ 8SO |
|
MT41K128M8DA-107 IT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
S29GL064S70DHI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT25QL01GBBB8ESF-0AAT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
24LC02BHT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
SFEM016GB1EA1TO-I-GE-111-STDSwissbit |
IC FLASH 128GBIT EMMC 153BGA |
|
S29WS128P0SBFW000Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 84FBGA |