







FUSE CERAMIC 1.6A 250VAC 300VDC
DIODE AVALANCHE 2KV 250MA SOD57
IC SRAM 128KBIT PARALLEL 68PLCC
RF TRANS NPN 16V 870MHZ 8SO
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (16K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
93LC66XT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
|
CY7C2170KV18-400BZXCRochester Electronics |
DDR SRAM, 512KX36, 0.45NS PBGA16 |
|
|
IS61VPS102436B-250TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
|
AS4C64M8D3-12BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
|
W958D6DBCX7I TRWinbond Electronics Corporation |
IC PSRAM 256MBIT PAR 54VFBGA |
|
|
FM34W02ULM8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
|
S25FL256SAGMFNG00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
|
BR25S128FVT-WE2ROHM Semiconductor |
IC EEPROM 128K SPI 20MHZ 8TSSOP |
|
|
IS42S32400F-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
|
S-93C46BD0I-I8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ SNT8A |
|
|
MT29F4G08ABAEAH4-ITS:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
S34ML02G104BHB013Flip Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
|
RM25C64C-LSNI-BAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8SOIC |