DDR SRAM, 1MX18, 0.45NS PBGA165
7" 500A:333MV ROGOWSKI COIL
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61WV1288EEBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
S29GL512S11GHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
CY7C0832AV-133AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 120TQFP |
|
71V424S12PHG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS2502P+T&RMaxim Integrated |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
SST26WF040BT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI/QUAD 8SOIC |
|
W631GG8MB-11 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
NM24C03NRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
M24256-DRMN3TP/KSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
MT29F2G08ABAEAH4-IT:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V124SA12PHRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
IS25LP032D-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
CY7C0251-25AXCRochester Electronics |
IC SRAM 144K PARALLEL 100TQFP |